Electronic device and method for manufacturing the same

ABSTRACT

A method for manufacturing an electronic device includes providing a substrate, forming a plurality of connecting pads and a plurality of conductive portions partially overlapped by the plurality of connecting pads on a surface of the substrate; forming a plurality of conductive lines on the substrate, wherein the plurality of conductive lines are electrically connected to the plurality of conductive portions; and bonding a plurality of light emitting units to the plurality of connecting pads. The method may further includes identifying a defective light emitting unit from the plurality of light emitting units; removing the defective light emitting unit from a corresponding position on the substrate; and bonding-another light emitting unit to the corresponding position.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/190,174, filed on Nov. 14, 2018, the disclosure of which isincorporated by reference herein.

BACKGROUND OF THE DISCLOSURE 1. Field of the Disclosure

The present disclosure is related to an electronic device and relatedmanufacturing method, and more particularly, to an electronic devicewith a repairing light emitting unit and related manufacturing method.

2. Description of the Prior Art

Nowadays, display devices have advantages of portability, low powerconsumption, and low radiation. Therefore, they are widely used invarious electronic devices, such as desktop computers, notebooks, smartphones, car displays and head up displays. In addition, self-luminouslight emitting elements are applied to display devices for providinglight source or displaying images. When disposing the self-luminouslight emitting elements in the display device, some defective lightemitting elements may be detected. Therefore, it is an important issuefor the manufacturers to improve the repair technique of the lightemitting elements, so as to increase the fabrication yield.

SUMMARY OF THE DISCLOSURE

One of the objectives of the present disclosure is to provide anelectronic device and related manufacturing method, wherein a repairingtechnique of light emitting units is introduced.

A method for manufacturing an electronic device includes providing asubstrate, forming a plurality of connecting pads and a plurality ofconductive portions partially overlapped by the plurality of connectingpads on a surface of the substrate; forming a plurality of conductivelines on the substrate, wherein the plurality of conductive lines areelectrically connected to the plurality of conductive portions; bondinga plurality of light emitting units to the plurality of connecting pads;identifying a defective light emitting unit from the plurality of lightemitting units; removing the defective light emitting unit from acorresponding position on the substrate; and bonding another lightemitting unit to the corresponding position.

A method for manufacturing an electronic device includes providing asubstrate; forming a plurality of connecting pads and a plurality ofconductive portions partially overlapped by the plurality of connectingpads on a surface of the substrate; forming a plurality of conductivelines on the substrate, wherein the plurality of conductive lines areelectrically connected to the plurality of conductive portions; andbonding a plurality of light emitting units to the plurality ofconnecting pads.

These and other objectives of the present disclosure will no doubtbecome obvious to those of ordinary skill in the art after reading thefollowing detailed description of the embodiment that is illustrated inthe various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a process flowchart of a method for manufacturing anelectronic device according to a first embodiment of the presentdisclosure.

FIG. 2 is a schematic diagram illustrating the manufacturing processesand related equipment and devices of the method for manufacturing anelectronic device according to the first embodiment of the presentdisclosure.

FIG. 3 is a schematic diagram of a partial enlargement of the substrateshown in FIG. 2.

FIG. 4 to FIG. 5 are schematic diagrams of sectional views showingmanufacturing processes of the method for manufacturing the electronicdevice according to the first embodiment of the present disclosure.

FIG. 6 is a sectional schematic diagram of a partial enlargement of anelectronic device according to a first variant embodiment of the firstembodiment of the present disclosure.

FIG. 7 is a schematic diagram of top view of an electronic deviceaccording to a second variant embodiment of the first embodiment of thepresent disclosure.

FIG. 8 is a sectional schematic diagram of a partial enlargement alongcross-section line 8-8′ of the electronic device shown in FIG. 7.

FIG. 9 is a schematic diagram illustrating the manufacturing processesand related equipment and devices of the method for manufacturing anelectronic device according to a third variant embodiment of the firstembodiment of the present disclosure.

FIG. 10 is a sectional schematic diagram of light emitting unit of thefirst embodiment of the electronic device of the present disclosure.

FIG. 11, FIG. 12A, FIG. 12B, and FIG. 13 are sectional schematicdiagrams of light emitting units of different types that can be used inthe electronic device of the present disclosure.

FIG. 14 is a schematic diagram of a partial top view of an electronicdevice according to a second embodiment of the present disclosure.

FIG. 15 is a sectional schematic diagram of a partial enlargement of theconnecting pads shown in FIG. 14.

FIG. 16 is a schematic diagram of a partial top view of an electronicdevice according to a third embodiment of the present disclosure.

FIG. 17 is a schematic diagram of a partial top view of an electronicdevice before the repairing process according to a fourth embodiment ofthe present disclosure.

FIG. 18 is a schematic diagram of a partial top view of the electronicdevice shown in FIG. 17 after the repairing process.

DETAILED DESCRIPTION

The present disclosure may be understood by reference to the followingdetailed description, taken in conjunction with the drawings asdescribed below. It is noted that, for purposes of illustrative clarityand being easily understood by the readers, various drawings of thisdisclosure show a portion of the display device, and certain elements invarious drawings may not be drawn to scale. In addition, the number anddimension of each device shown in drawings are only illustrative and arenot intended to limit the scope of the present disclosure.

Certain terms are used throughout the description and following claimsto refer to particular components. As one skilled in the art willunderstand, electronic equipment manufacturers may refer to a componentby different names. This document does not intend to distinguish betweencomponents that differ in name but not function. In the followingdescription and in the claims, the terms “include”, “comprise” and“have” are used in an open-ended fashion, and thus should be interpretedto mean “include, but not limited to . . . ”.

It will be understood that when an element or layer is referred to asbeing “on” or “connected to” another element or layer, it can bedirectly on or directly connected to the other element or layer, orintervening elements or layers may be presented. In contrast, when anelement is referred to as being “directly on” or “directly connected to”another element or layer, there are no intervening elements or layerspresented.

It should be noted that the technical features in different embodimentsdescribed in the following can be replaced, recombined, or mixed withone another to constitute another embodiment without departing from thespirit of the present disclosure.

Referring to FIG. 1 to FIG. 5, FIG. 1 is a process flowchart of a methodfor manufacturing an electronic device according to a first embodimentof the present disclosure, FIG. 2 is a schematic diagram illustratingthe manufacturing processes and related equipment and devices of themethod for manufacturing an electronic device according to the firstembodiment of the present disclosure, FIG. 3 is a schematic diagram of apartial enlargement of the substrate shown in FIG. 2, and FIG. 4 to FIG.5 are schematic diagrams of sectional views showing manufacturingprocesses of the method for manufacturing the electronic deviceaccording to the first embodiment of the present disclosure. Accordingto a first embodiment of the present disclosure, the method formanufacturing an electronic device comprises performing Step S100:providing a substrate SB. As shown in Part (1) of FIG. 2 and FIG. 3, thesubstrate SB may comprise a transparent substrate, for example, a rigidsubstrate such as a glass substrate or a quartz substrate, or a flexiblesubstrate such as a plastic substrate, but not limited thereto. Theelectronic device may comprise the substrate SB, a plurality ofconductive lines and a plurality of connecting pads on a surface SB1 ofthe substrate SB. For example, a plurality of data lines DL, a pluralityof gate lines GL, and a plurality of common lines CL may be disposed onthe surface SB1 of the substrate SB, and a plurality of connecting pads102 are also disposed on the surface SB1 of the substrate SB.

In an embodiment, the surface SB1 of the substrate SB may be a planesurface. In another embodiment, the substrate SB may have a terrain andthe surface SB1 of the substrate SB may be an uneven surface. In anembodiment, at least a portion of one of the connecting pads 102 maypass through at least one insulating layer on the substrate SB toconnect with a driving circuit (not shown). The driving circuit maycomprise switch elements, such as thin-film transistors.

Some connecting pads 102 (connecting pads 1022 shown in FIG. 3) may beelectrically connected to the common lines CL, and some connecting pads102 (connecting pads 1021 shown in FIG. 3) may be electrically connectedto the data lines DL and the gate lines GL through the switch elements130, wherein the switch elements 130 may be thin film transistors (TFT)in this embodiment, but not limited thereto. In some embodiments, theswitch elements 130 may be replaced by integrated chips (ICs), whereinthe ICs are electrically connected to the data lines DL and control thelight emitting units EU to emit light through the connecting pads 1022.The substrate SB with the light emitting units EU may be a light source(such as a back light component) or a display panel of the electronicdevice ED. For example, the substrate SB with the light emitting unitsEU is an active display panel. A plurality of pixels PX may be definedon the substrate SB, and each pixel PX may comprise a plurality ofsub-pixels PXS1, PXS2, PXS3. For example, the light emitting units EUmay comprise three kinds of light emitting units EU1, EU2, EU3 that canproduce different color light, such as blue light, green light and redlight, but not limited thereto. The boundary of the sub-pixels PXS1,PXS2, PXS3 can be defined by the connection line of the middle points ofthe minimum distances of adjacent light emitting units EU1, EU2, EU3,and the total area of the sum of the light emitting units EU1, EU2, EU3is the area of one pixel PX.

Then, Step S102 is performed to apply a first bonding material MT1 onthe substrate SB, wherein the first bonding material MT1 is omitted inFIG. 2 and FIG. 3, but shown in FIG. 4. The first bonding material MT1may comprise any suitable material used for bonding package elements toconnecting pads. For example, the first bonding material MT1 maycomprise solder material or eutectic material or may be an anisotropicconductive film (ACF). In this embodiment, a eutectic material isadopted for the first bonding material MT1 for instance. Common eutecticmaterial may comprise Al—Si alloy, Al—Ge alloy, Au—Si alloy, Au—Gealloy, Au—Sn alloy, and Cu—Sn alloy, whose melting points may be in therange from 250° C. to 350° C., but not limited thereto. Step S104 isfollowing carried out to bonding a plurality of light emitting units EUto the substrate SB through the first bonding material MT1. For bondingthe light emitting units EU, a first equipment EP1 is adopted totransfer the light emitting units EU to the substrate SB. The firstequipment EP1 may have a transfer stage and a plurality of vacuum chucksEP12, such that the first equipment EP1 can massively transfer the lightemitting units EU at the same time. In some other embodiments, the firstequipment EP1 may comprise an electrostatic device, an electric-magneticdevice or adhesive stamps to replace the vacuum chucks EP12. Whentransferring the light emitting units EU to the substrate SB, analignment process may be proceed based on the alignment mark(s) on thesubstrate SB, and therefore the light emitting units EU can beaccurately loaded on the substrate SB and electrically connected tocorresponding connecting pads 102 through the first bonding materialMT1. The light emitting units EU may comprise one or more electrodes 104at their bottom surface. Each electrode 104 may correspond to oneconnecting pad 102, and the first bonding material MT1 is positionedbetween the electrodes 104 and their corresponding connecting pads 102after the bonding process. As shown in Part (2) of FIG. 2, the lightemitting units EU are arranged as an array on the substrate SB.

Then, Step S106 is proceeded to identify a defective light emitting unitER from the plurality of light emitting units EU. For example, aphotoluminescence test and/or an electroluminescence test may beperformed for detecting whether defective light emitting unit (s) existsor not. For illustration, Part (2) of FIG. 2 shows two defective lightemitting units ER are identified in the corresponding position A andcorresponding position B as an example. After identifying thecorresponding positions of the defective light emitting units ER, thetest result may be reported to the control system, and therefore arepairing process will be performed to replace the defective lightemitting units ER with new light emitting units.

Step S108 is then proceeded to remove the defective light emitting unitsER from the corresponding position A on the substrate SB, as shown inPart (3) in FIG. 2. In this embodiment, a second equipment EP2 isadopted by removing the defective light emitting units ER, and thesecond equipment EP2 may be different from the first equipment EP1 andmay have one vacuum chuck EP22. In some embodiments, the secondequipment EP2 may comprise an electrostatic device, an electric-magneticdevice or an adhesive stamp to replace the vacuum chuck EP22. In otherembodiments, the first equipment EP1 may still be utilized in Step S108.As shown in FIG. 2, one defective light emitting unit ER is removed inone removing procedure since the second equipment EP2 has one vacuumchuck EP22 in this embodiment. For example, the defective light emittingunit ER in the corresponding position A is picked up by the secondequipment EP2, while the other defective light emitting unit ER in thecorresponding position B is remained on the substrate SB. Beforeremoving the defective light emitting unit ER in the correspondingposition A, the second equipment EP2 may perform an alignment processaccording to the alignment mark on the substrate SB, so as to pick upthe correct defective light emitting unit ER from the correspondingposition A. In some other embodiments, two or more defective lightemitting units ER may be removed in the Step S108 at the same time,which means the defective light emitting units ER in both thecorresponding position A and the corresponding position B may be removedtogether.

Then, Step S110 is performed to apply a second bonding material MT2 forbonding a repairing light emitting unit EUR, as shown in FIG. 4. In thisembodiment, the second bonding material MT2 may be applied on theconnecting pads 102 in the corresponding position A on the substrate SB,from which the defective light emitting unit ER is removed. The secondbonding material MT2 may be different from or the same as the firstbonding material MT1. In detail, the main composition of the secondbonding material MT2 may be different from or the same as the maincomposition of the first bonding material MT1. In some embodiment, thesecond bonding material MT2 may comprise the material with a lowermelting point than that of the first bonding material MT1. For example,the second bonding material MT2 may be a solder material with a meltingpoint in the range from 90° C. to 450° C., but not limited thereto. Inthis embodiment, the first bonding material MT1 may be remained in thecorresponding position A, and the second bonding material MT2 is appliedon the first bonding material MT1. After the defective light emittingunit ER is pulled out from the first bonding material MT1 on theconnecting pads 102, the top surface of the first bonding material MT1may have one or more caves which contained the electrodes 104 of thedefective light emitting units ER when it was not removed. In addition,in some embodiments, the remained first bonding material MT1 may have aroughness surface RS. In some other embodiments, the first bondingmaterial MT1 may be totally removed or partially removed from thecorresponding position A before applying the second boding material MT2.

Step S112 is then carried out to bonding a repairing light emitting unitEUR to the corresponding position A through the second bonding materialMT2. As shown in Part (4) of FIG. 2, the second equipment EP2 may beused for transferring the repairing light emitting unit EUR to thecorresponding position A. Then, the repairing light emitting unit EUR isbonded on the surface SB1 of the substrate SB in the correspondingposition A by using the second bonding material MT2, as shown in Part(5) of FIG. 2 and FIG. 5. After bonding the repairing light emittingunit EUR on the substrate SB, the second bonding material MT2 ispositioned between the repairing light emit unit EUR and the substrateSB. Since the first bonding material MT1 is not removed from thecorresponding position A in this embodiment, the second bonding materialMT2 is also positioned between the repairing light emitting unit EUR andthe first bonding material MT1. Referring to FIG. 5, the first bondingmaterial MT1 and the second bonding material MT2 may have an interfacewith roughness, shown as the roughness surface RS. Further adjustmentprocess (such as annealing or etching process) may be performed toreduce the contact resistance of the roughness surface RS between thefirst bonding material MT1 and the second bonding material MT2, suchthat the brightness/color performance of the repairing light emittingunit EUR may be substantially the same as the brightness/colorperformance of the light emitting unit EU. In addition, the width W1 ofthe first bonding material MT1 a long a direction is less than the widthW2 of the second bonding material MT2 along the same direction. It couldbe considered as that the size or the area of the first bonding materialMT1 corresponding to one of the light emitting units EU (or to thecorresponding position A) is smaller than the size or the area of thesecond bonding material MT2 corresponding to one repairing lightemitting unit EUR (or to the corresponding position A). Further, afterbonding the repairing light emitting unit EUR to the correspondingposition A, the maximum height H1 of the first bonding material MT1 onthe substrate SB (defined by the distance between the top surface of thefirst bonding material MT1 to the surface SB1 of the substrate SB) isless than the maximum height H2 of the second bonding material MT2 onthe substrate SB (defined by the distance between the top surface of thesecond bonding material MT2 to the surface SB1 of the substrate SB). Inaddition, the distance D1 from the top surface S1 of one of the lightemitting units EU to the surface SB1 of the substrate SB is less thanthe distance D2 from the top surface S2 of the repairing light emittingunit EUR to the surface SB1 of the substrate SB because the secondbonding material MT2 is further positioned between the repairing lightemitting unit EUR and the substrate SB. In some embodiments, the contactresistance of the interface (such as the roughness surface RS) betweenthe first bonding material MT1 and the second bonding material MT2 maybe adjusted to modulate the brightness of the repairing light emittingunit EUR such that the whole brightness of the repairing light emittingunit EUR and the light emitting units EU may be more uniformed.

Then, Step S108 to Step S112 could be repeated to remove the defectivelight emitting unit ER in the corresponding position B and to bondanother repairing light emitting unit EUR in the corresponding positionB through the second bonding material MT2, so as to repair the defectsof the electronic device ED.

Referring to the Part (5) of FIG. 2 and FIG. 5, the present disclosureprovides an electronic device ED that comprises a substrate SB, aplurality of light emitting units EU and at least one repairing lightemitting unit EUR arranged as an array on the substrate SB, a firstbonding material MT1 disposed between the plurality of light emittingunits EU and the substrate SB, and a second bonding material MT2disposed between the at least one repairing light emitting unit EUR andthe substrate SB.

Referring to FIG. 6, FIG. 6 is a sectional schematic diagram of apartial enlargement of an electronic device according to a first variantembodiment of the first embodiment of the present disclosure. In StepS110 of this variant, the second bonding material MT2 is first appliedonto one or more of the electrodes 104 of the repairing light emittingunit EUR, before bonding the repairing light emitting unit EUR onto thecorresponding position A in Step S112.

Referring to FIG. 7 and FIG. 8, FIG. 7 is a schematic diagram of topview of an electronic device according to a second variant embodiment ofthe first embodiment of the present disclosure, and FIG. 8 is asectional schematic diagram of a partial enlargement along cross-sectionline 8-8′ of the electronic device shown in FIG. 7. This variantembodiment is different from the first embodiment in that theanisotropic conductive film is used as the first bonding material MT1′for bonding the light emitting units EU in Step S104. The first bondingmaterial MT1′ may be applied on the most area of the surface SB1 of thesubstrate SB. In addition, after a defective light emitting unit ER isidentified and removed, a portion of the first bonding material MT1′corresponding to the defective light emitting unit ER may be removed,such that an opening or a cave 106 is formed in the first bondingmaterial MT1′. Then, the repairing light emitting unit EUR is bonded onthe exposed connecting pads 102 on the surface SB1 of the substrate SBthrough the second bonding material MT2. In some embodiments, theportion of the first bonding material MT1′ corresponding to thedefective light emitting unit ER is completely removed, thus there is nofirst bonding material MT1′ remained between the repairing lightemitting unit EUR and the connecting pads 102, and the maximum height H1of the first bonding material MT1′ may be similar to the maximum heightH2 of the second bonding material MT2. In some embodiments, the firstbonding material MT1′ may be remained between the repairing lightemitting unit EUR and the connecting pads 102, and an interface withroughness may exist between the first bonding material MT1′ and thesecond bonding material MT2, as shown in FIG. 8. In this variantembodiment, the maximum height H1 of the first bonding material MT1′ isstill less than the maximum height H2 of the second bonding materialMT2.

Referring to FIG. 9, FIG. 9 is a schematic diagram illustrating themanufacturing processes and related equipment and devices of the methodfor manufacturing an electronic device according to a third variantembodiment of the first embodiment of the present disclosure. Thisembodiment is mainly different from the first embodiment in that thesecond equipment EP2 may comprise a plurality of vacuum chucks EP22, andtherefore the defective light emitting units ER in the correspondingposition A and the corresponding position B can be picked up in the sameprocedure, as shown in Part (3) of FIG. 9. Then, two repairing lightemitting units EUR can be transferred to the corresponding position Aand the corresponding position B and be bonded to the correspondingposition A and the corresponding position B through the second bondingmaterial MT2 at the same time, as shown in Part (4) and Part (5) of FIG.9. The second equipment EP2 may be different from the first equipmentEP1 in some embodiments, but not limited thereto. The first equipmentEP1 may be adopted for removing the defective light emitting units ERand transferring the repairing light emitting units EUR in some otherembodiments. In other words, the tools used in Step S102 and Step S110shown in FIG. 1 can be the same or different.

Referring to FIG. 10, FIG. 10 is a sectional schematic diagram of lightemitting unit of the first embodiment of the electronic device of thepresent disclosure. The light emitting unit EU used for forming theelectronic device ED mentioned above may be a light emitting diode(LED). For example, the light emitting unit EU may be a micro LED or amini Led in the first embodiment, but not limited thereto. In someembodiments, the light emitting unit EU may be a quantum LED. The lightemitting unit EU comprises a first semiconductor layer 114, a lightemitting layer 112, and a second semiconductor layer 110, wherein thelight emitting layer 112 may be, but not limited to, a multiple quantumwell (MQW) layer for example. The light emitting unit EU furthercomprises a first electrode 1041 electrically connected to the firstsemiconductor layer 114 and a second electrode 1042 electricallyconnected to the second semiconductor layer 110. A passivation layer 117is disposed between the first semiconductor layer 114 and the secondelectrode 1042 and between the light emitting layer 112 and the secondelectrode 1042. In addition, the light emitting unit EU may optionallycomprise an encapsulation layer 116 encompassing the first semiconductorlayer 114, the light emitting layer 112, and the second semiconductorlayer 110 but exposing the first electrode 1041 and the second electrode1042 at the bottom side of the light emitting unit EU. In some otherembodiments, the light emitting unit EU may not have the encapsulationlayer 116.

Referring to FIG. 11 to FIG. 13, FIG. 11 to FIG. 13 are sectionalschematic diagrams of light emitting units of different types that canbe used in the electronic device of the present disclosure. As shown inFIG. 11, the light emitting unit EU may be a vertical-type LED. Thefirst electrode 1041 electrically connected to the first semiconductorlayer 114 is positioned at the bottom of the light emitting unit EU.However, the second electrode 1042 electrically connected to the secondsemiconductor layer 110 is positioned at the top of the light emittingunit EU. Accordingly, when adopting the vertical-type LED as the lightemitting unit EU, it may be bonded onto the connecting pad 102 on thesurface SB1 of the substrate SB in Step S104. After bonding thevertical-type LED onto the substrate SB, other conductive lines may beformed on the vertical-type LED to electrically connect the secondelectrode 1042 of the vertical-type LED. As shown in FIG. 12A, in someembodiments, a light-emitting package 120 including three light emittingunits EU1, EU2, EU3 may be used for manufacturing the electronic deviceED. An encapsulation material 119 may be used for packaging three lightemitting units EU1, EU2, EU3 together. The encapsulation material 119may comprise (but not limited thereto) resin, epoxy or other suitablematerial. A protection layer 118 may be formed on the light emittingunits EU1, EU2, EU3. The light emitting units EU1, EU2, EU3 mayrespectively produce different color lights, such as blue light, greenlight, and red light. In FIG. 12B, the protection layer 118 may replacethe above-mentioned encapsulation material 119. In other words, theprotection layer 118 and the encapsulation material 119 may comprise thesame material and may be formed at the same time for packaging the lightemitting units EU1, EU2, EU3. The protection layer 118 may comprise (butnot limited thereto) resin, epoxy or other suitable material. In FIG.13, another type of light-emitting package 122 is illustrated. Eachlight-emitting package 122 comprises three light emitting units EU1 thatproduce light with the same color, such as blue light, and a firstlight-converting layer CV1 and a second light-converting layer CV2 areformed on two of the light emitting units EU1, such that the firstlight-converting layer CV1 and the second light-converting layer CV2 canrespectively converting the color light emitted from the light emittingunits EU1 to other color lights, such as green light and red light. Insome embodiments, a third light-converting layer CV3 can be formed onthe other light emitting unit EU1 for enhancing the light performance.In addition, the light-emitting package 122 may optionally comprise afilter layer 124 disposed on the first light-converting layer CV1 andthe second light-converting layer CV2 and a protection layer 126disposed on the light emitting units EU1.

Referring to FIG. 14 and FIG. 15, FIG. 14 is a schematic diagram of apartial top view of an electronic device according to a secondembodiment of the present disclosure, and FIG. 15 is a sectionalschematic diagram of a partial enlargement of the connecting pads1021/1022 along cross-section line A-A′ of the electronic device shownin FIG. 14. With comparison to FIG. 3, the electronic device ED of thisembodiment comprises a plurality of redundant pads 1501 and 1502disposed on the substrate SB. The redundant pads 1501 and 1502 are madeof a conductive layer (such as a first metal layer) different from theconductive layer (such as a second metal layer) that forms theconnecting pads 1021 and 1022. The redundant pads 1501 and 1502 arepartially overlapped by the corresponding connecting pads 1021 and 1022and are electrically connected to the corresponding connecting pads 1021and 1022 respectively. If a defective light emitting unit ER isidentified and removed from the substrate SB, the connecting pads 1021and 1022 originally connected to the defective light emitting unit ERmay be damaged or have uncompleted surface in some cases. In thissituation, the redundant pads 1501 and 1502 can still provide thefunction the same as the connecting pads 1021 and 1022 such that the newbonded repairing light emitting units EUR can be electrically connectedto the corresponding connecting pads 1021 and 1022 and the redundantpads 1501 and 1502. The common lines CL may extend to the redundant pads1502 to cover a portion of the corresponding redundant pads 1502. Viaholes 1521 (shown as the circles in FIG. 14) may be formed in aninsulating layer 152 between the extending parts of the common lines CLand the redundant pads 1502 for electrically connecting the common linesCL to the corresponding redundant pads 1502. It may optionally compriseat least one layer between the redundant pads 1502 and the substrate SBor between the insulating layer 152 and the substrate SB.

Referring to FIG. 16, FIG. 16 is a schematic diagram of a partial topview of an electronic device according to a third embodiment of thepresent disclosure. This embodiment is different from the secondembodiment in that the electronic device ED shown in FIG. 16 maycomprise a passive light emitting panel (or a passive display panel).The first electrodes of the light emitting units EU1, EU2, EU3 areelectrically connected to corresponding common lines CL, and the secondelectrodes of the light emitting units EU1, EU2, EU3 are electricallyconnected to corresponding data lines DL. No switch elements is disposedbetween the light emitting units EU1, EU2, EU3, but not limited thereto.In this embodiment, the redundant pads 1501 and 1502 are also formed andoverlapped by the corresponding connecting pads 1021 or 1022. Theoverlapping area of the redundant pads 1501 and 1502 and thecorresponding connecting pads 1021 or 1022 can be adjusted.

Referring to FIG. 17 and FIG. 18, FIG. 17 is a schematic diagram of apartial top view of an electronic device before the repairing processaccording to a fourth embodiment of the present disclosure, and FIG. 18is a schematic diagram of a partial top view of the electronic deviceshown in FIG. 17 after the repairing process. As shown in FIG. 17, thefourth embodiment is different from the third embodiment in that theredundant pads 1501 and 1502 are not overlapped by the connecting pads1021 and 1022 in this embodiment, and the redundant pads 1501, 1502 andthe connecting pads 1021, 1022 may be made of the same conductive layer,such as the same metal layer. If a defective light emitting unit ER isidentified, the repairing process may comprise performing a cut-offprocess 160 to the conductive line of the connecting pad 1022 that iselectrically connected to the defective light emitting unit ER (such asthe light emitting unit EU3 is defective). Then, a repairing lightemitting unit EUR is provided and bonded on the redundant pads 1501 and1502 by the second bonding material. In this embodiment, the defectivelight emitting unit EU3 may not be removed, and the repairing lightemitting unit EUR is positioned adjacent to the defective light emittingunit EU3. For example, the repairing light emitting unit EUR ispositioned in the same sub-pixel or the same pixel as the defectivelight emitting unit EU3.

According to the method for manufacturing the electronic device of thepresent disclosure, the defective light emitting unit may be removed andreplaced by the repairing light emitting unit, and a second bondingmaterial is used for bonding the repairing light emitting unit.Accordingly, the second bonding material may provide a good electricalconnection between the repairing light emitting unit and the connectingpads on the substrate. When there is no space for disposing redundantlight emitting units in the sub-pixels, such as in the high resolutiondisplay panels, the present disclosure provides a repairing process toeffectively replace the defective light emitting units by the repairinglight emitting units. In some embodiments, redundant pads may bedisposed on the substrate. The redundant pads can be partiallyoverlapped by the connecting pads in order to save the sub-pixel space.Even though the redundant pads is formed on the substrate, no redundantlight emitting unit is pre-disposed on the substrate, and repairinglight emitting unit would be positioned on the redundant pads whendefective light emitting units are identified. Accordingly, the cost oflight emitting units may be reduced. In addition, since a second bondingmaterial is used for bonding the repairing light emitting unit on thesubstrate, the repairing light emitting unit may have a greater heightthan other light emitting units originally bonded on the substratethrough the first bonding material.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the disclosure. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the disclosure. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A method for manufacturing an electronic device,comprising: providing a substrate; forming a plurality of connectingpads and a plurality of conductive portions partially overlapped by theplurality of connecting pads on a surface of the substrate, wherein aninsulating layer is disposed between the plurality of connecting padsand the plurality of conductive portions; forming a plurality ofconductive lines on the substrate, wherein the plurality of conductivelines are electrically connected to the plurality of conductiveportions; bonding a plurality of light emitting units to the pluralityof connecting pads; identifying a defective light emitting unit from theplurality of light emitting units; removing the defective light emittingunit from a corresponding position on the substrate; and bonding anotherlight emitting unit to the corresponding position.
 2. The method formanufacturing the electronic device of claim 1, wherein one of theplurality of connecting pads is electrically connected to one of theplurality of conductive lines through one of the plurality of conductiveportions.
 3. The method for manufacturing the electronic device of claim2, wherein the one of the plurality of conductive lines is a data line.4. The method for manufacturing the electronic device of claim 2,wherein a portion of the one of the plurality of conductive lines isoverlapped with at least one of the plurality of light emitting units.5. The method for manufacturing the electronic device of claim 1,further comprising applying a bonding material on the plurality of theconnecting pads.
 6. The method for manufacturing the electronic deviceof claim 5, wherein the plurality of light emitting units are bonded tothe plurality of connecting pads through the bonding material.
 7. Themethod for manufacturing the electronic device of claim 1, wherein oneof the plurality of connecting pads is directly connected to one of theplurality of conductive lines.
 8. The method for manufacturing theelectronic device of claim 7, wherein the one of the plurality ofconductive lines is a data line.
 9. The method for manufacturing theelectronic device of claim 1, wherein the insulating layer has at leastone via hole, and one of the plurality of connecting pads iselectrically connected to one of the plurality of conductive portionsthrough the at least one via hole.
 10. A method for manufacturing anelectronic device, comprising: providing a substrate; forming aplurality of connecting pads and a plurality of conductive portionspartially overlapped by the plurality of connecting pads on a surface ofthe substrate; forming a plurality of conductive lines on the substrate,wherein the plurality of conductive lines are electrically connected tothe plurality of conductive portions, and one of the plurality ofconnecting pads is electrically connected to one of the plurality ofconductive lines through one of the plurality of conductive portions,and wherein an insulating layer is disposed between the one of theplurality of connecting pads and the one of the plurality of conductiveportions; and bonding a plurality of light emitting units to theplurality of connecting pads.
 11. The methods for manufacturing theelectronic device of claim 10, wherein the insulating layer has at leastone via hole, and the one of the plurality of connecting pads iselectrically connected to the one of the plurality of conductiveportions through the at least one via hole.
 12. The method formanufacturing the electronic device of claim 10, wherein the one of theplurality of conductive lines is a data line.
 13. The method formanufacturing the electronic device of claim 10, wherein a portion ofthe one of the plurality of conductive lines is overlapped with at leastone of the plurality of light emitting units.
 14. The method formanufacturing the electronic device of claim 10, further comprisingapplying a bonding material on the plurality of the connecting pads. 15.The method for manufacturing the electronic device of claim 14, whereinthe plurality of light emitting units are bonded to the plurality ofconnecting pads through the bonding material.
 16. The method formanufacturing the electronic device of claim 10, wherein one of theplurality of connecting pads is directly connected to one of theplurality of conductive lines.
 17. The method for manufacturing theelectronic device of claim 16, wherein the one of the plurality ofconductive lines is a data line.